Surface emitting semiconductor laser
US6320891A · kind A · utility
9Cited by
4References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 7, 2000 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Mar 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser and a surface emitting semiconductor laser array having a photodetector capable of monitoring the light output of a laser easily at a high speed without deteriorating the performance of a surface emitting laser. An n type GaAs optical absorbing layer having an opening in the center of a waveguide path is inserted between the p type DBR layer and the spacer layer of the surface emitting semiconductor laser as a light receiving part and a PD electrode which takes out electrons generated in this optical absorbing layer is formed on the optical absorbing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.