Surface emitting semiconductor laser
US6320893A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 12, 1998 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Aug 12, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser having the stable transverse mode, reduced threshold current, and high output is provided. The surface emitting semiconductor laser has a structure that top and bottom spacer layers are formed on both sides of an active layer and top and bottom reflection layers are formed on the top side of the top spacer layer and the bottom side of the bottom spacer layer respectively, wherein the surface emitting semiconductor has optical confinement layers provided on one or both contact surfaces between the top and bottom spacer layers and the top and bottom reflection films, the optical confinement layers comprise a semiconductor layer having a thickness of 100 nm or less formed on the entire surface excepting the light emission area, which semiconductor layer consists of a material having a lattice constant similar to the one of the material of the top and bottom spacer layer and the one of the material of the top and bottom reflection films and having the refractive index slightly smaller than the effective refractive index of the material of the top and bottom spacer layers and the material of the top and bottom reflection films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.