Spin-valve magnetic resistance sensor and thin-film magnetic head
US6322911A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2000 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Feb 1, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/11
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a spin-valve magnetic resistance sensor in which an underlayer, which has a second underlayer film with an fcc structure consisting of an alloy formed by combining one or more elements selected from a set consisting of elements of group VIIIa and group Ib of the periodic table, and one or more elements selected from a set consisting of elements of groups IIa, IVa, Va, VIa, IIb, Ib and IVb of the periodic table, such as NiFeCrTi or NiCrTi, etc., is formed on the substrate, and a magnetic resistance (MR) film which has an antiferromagnetic layer consisting of a Pt.sub.1-x Mn.sub.x alloy or an Ir.sub.1-x Mn.sub.x alloy is laminated on top of this underlayer. The composition ratio of the element with the smallest free energy of oxide formation among the elements contained in the alloy of the second underlayer film is in the range of 0.1 atomic % to 15 atomic %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.