Compound semiconductor light emitting device and method of fabricating the same
US6323052A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1998 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Jun 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34353
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of .lambda. (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.