Tantalum sputtering target and method of manufacture
US6323055A · kind A · utility
19Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 1999 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | May 21, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/968
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.