Method of making I-III-VI semiconductor materials for use in photovoltaic cells
US6323417A · kind A · utility
94Cited by
18References
56Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1999 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Sep 28, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for making layers of I-III-VI semiconductor materials for use in photovoltaic cells, and particularly for making CIS and variations on CIS, such as CIGS and CIGSS. The method includes formation of a plurality of precursor films of the elemental components and at least one final heat treatment step in which the final semiconductor material is formed, with the precursor film for at least one III component being deposited prior to any precursor film including the I component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.