X-ray semiconductor detector
US6323490A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1999 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Mar 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/195
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An X-ray semiconductor detector has a pixel array structure in which a plurality of pixel elements are arrayed in a matrix. Each pixel element includes an X-ray/charge conversion film for generating charges in accordance with an incident X-ray, a storage capacitor for storing the signal charges generated in the X-ray/charge conversion film, a signal read transistor for reading the signal charges from the storage capacitor, and a protective diode arranged to remove excessive charges from the storage capacitor and prevent dielectric breakdown of the signal read transistor. The protective diode is arranged below the storage capacitor. Since the protective diode is arranged below the storage capacitor, it does not decrease the pixel density. Since the protective diode is covered with the storage capacitor, it can be shielded from an X-ray. Therefore, variations in OFF current of the protective diode by an X-ray and dielectric breakdown of the protective diode can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.