Single-electron memory device using an electron-hole coulomb blockade
US6323504A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2000 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Feb 1, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/937
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A single-electron memory device using the electron-hole Coulomb blockade is provided. A single-electron memory device in accordance with an embodiment of the present invention includes a plurality of quantum dot tunnel-junction arrays, a gate electrode, and source and drain electrodes. The plurality of quantum dot tunnel-junction arrays include at least two tunnel-junctions, are parallelly coupled to each other, and are well separated from each other to prevent single-electron tunneling between them. One of the plurality of quantum dot tunnel-junction arrays includes the gate electrode, and the voltage applied to the gate electrode can vary the number of electron-hole pairs. Each of the above-mentioned plurality of quantum dot tunnel-junction arrays includes separate source and drain electrodes where voltages are applied
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.