Light emitting semiconductor element capable of suppressing change of driving current
US6324201A · kind A · utility
2Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1998 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Nov 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light emitting semiconductor element comprises a first additive layer which is added into a cladding layer or a middle layer. The first additive layer has a lattice constant which is different from a lattice constant of a semiconductor substrate. The light emitting semiconductor element is attached to a heat sink to form a laser device. The heat sink gives deformation to the light emitting semiconductor element. The first additive layer generates strain therein and suppresses influence of the deformation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.