Process for producing semiconductor article
US6326279A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2000 |
| Grant date | Dec 4, 2001 |
| Priority date | — |
| Expiry date | Mar 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To lessen the number of steps and reduce cost in the manufacture of high-quality SOI substrate, a process for producing a semiconductor article comprises the steps of forming a porous semiconductor layer at at least one surface of a first substrate, forming a non-porous single-crystal semiconductor layer on the porous semiconductor layer, bonding the first substrate to a second substrate with the former's non-porous single-crystal semiconductor layer facing the latter in contact, to form a bonded structure, and dividing the bonded structure at the porous semiconductor layer, wherein the process further comprises the step of previously forming on the one surface of the first substrate an epitaxial silicon layer in a thickness at least n-times (n.gtoreq.2) the thickness of the porous semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.