Method for crystallizing amorphous silicon layer
US6326286A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 1999 |
| Grant date | Dec 4, 2001 |
| Priority date | — |
| Expiry date | May 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An active layer commonly used in a thin-film-transistor is made by irradiating an amorphous silicon layer with a laser source at an energy density sufficient to induce substantially complete melting to form a melted region and an unmelted region. The melted region of the amorphous silicon layer is solidified with a lateral grain growth from the unmelted region to the melted region. Then the amorphous silicon layer is translated relative to the laser source. In such an apparatus, the laser source is prepared by emitting a laser beam through a mask. The mask has a plurality of transparent regions which comprises slits arranged adjacent to or next to each other and separated by a predetermined distance in certain applications. Such pattern includes contiguous chevron-shaped lines with curved apexes. Alternatively, the pattern also includes slim rectangular apertures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.