Semiconductor component and manufacturing method for semiconductor component

US6326292A · kind A · utility

Assignee

• Telefonaktiebolaget LM Ericsson (Publ) · SE

Inventors

• Anders Soderbarg · Uppsala, SE
• Håkan Sjödin · Knivsta, SE

Key dates

• Filing date: Nov 16, 1998
• Grant date: Dec 4, 2001
• Expiry date: Nov 16, 2018

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/904

Abstract

A semiconductor includes a buried conducting layer, such as a buried collector, comprises a trench, the walls of which are covered with a layer of a material in which dopant ions diffuse faster than in monocrystalline silicon. A contact area is doped in close proximity to the trench wall. The dopants will diffuse through the layer and form a low resistance connection to the buried layer. The layer may comprise polysilicon or porous silicon, or a silicide. If the material used in the layer is not in itself conducting, the size of the component may be significantly reduced.