Semiconductor simulation method
US6327555A · kind A · utility
17Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1999 |
| Grant date | Dec 4, 2001 |
| Priority date | — |
| Expiry date | Apr 27, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/23
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Impurity profiles Pi1 and Ps1 are determined for the same conditions by a reference acquiring means and a simulation capable of producing a result faster than the reference acquiring means, respectively. Errors between the impurity profile Pi1 determined by the reference acquiring means and the impurity profile Ps1 determined by the simulation are determined. An impurity profile Psx is calculated for another kind of conditions by the simulation, and a new impurity profile Psx' is calculated by correcting the impurity profile Psx so as to reflect the errors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.