Chemical vapor deposition of metals on a spherical shaped semiconductor substrate
US6328804A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 1999 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | May 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for chemical vapor deposition (MO CVD) of a metal layer upon a spherical substrate at atmospheric pressure are disclosed. The method performs chemical vapor deposition of a metal layer such as aluminum or copper upon the semiconductor spherical substrate by using a reactor made of a material such as quartz. The semiconductor spherical substrate moves and spins through the reactor where it is heated by a frequency heater such as an infrared heater. The heater utilizes infrared power source operating at a wavelength between 1 and 3 microns where the power is substantially absorbed by the semiconductor spherical substrate and is substantially transmitted by the quartz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.