Chuck heater for improved planar deposition process
US6328807A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1999 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Dec 14, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for the flame hydrolysis deposition (FHD) of a core material on a substrate provides a holder for a substrate which is heated to a predetermined temperature selected to maintain the substrate temperature relatively constant during the FHD process. As a result, the thickness of a thin film applied to the substrate is relatively uniform as is the index of refraction of the core material deposited on the substrate. In one embodiment, a chuck for receiving a disk-shaped substrate wafer is supplied with an embedded electrical heater for maintaining the chuck temperature at from about 700.degree. C. to about 900.degree. C. In another embodiment, a gas heater positioned on a side of the chuck opposite the wafer mounting is provided to heat the chuck at substantially the same temperature. In either embodiment, a chuck is rotated with respect to a line-flame burner which introduces a vaporized mixture of organometallic material into the line-flame burner for depositing a thin film of from about 5 to 6.5 microns of doped glass on the wafer substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.