Mesoporous silica film from a solution containing a surfactant and methods of making same
US6329017A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1999 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Oct 4, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249972
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.