Repair method for phase shift mask in semiconductor device
US6329106A · kind A · utility
4Cited by
10References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1999 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Sep 10, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/74
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is directed to prevent generating repair by-products during a repair process of a phase shift mask, and defects on a quartz substrate. According to the present invention, a repair method for phase shift mask in a semiconductor device so as to remove a bridge formed between a phase shift layer on a quartz substrate, comprises the steps of: first repairing the bridge by implanting a charging ion according to a focused ion beam("FIB") method; and second repairing the first repaired bridge portion by emitting laser and then removing the bridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.