Method for fabricating a thin-film transistor
US6329226A · kind A · utility
56Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2000 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Jun 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/113
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a thin-film field effect transistor such as a thin-film field effect transistor. The method includes preparing a gate electrode on a substrate, anodizing at least a portion of the gate electrode to form a gate dielectric, and fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric. The method also includes depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.