Semiconductor cleaning method
US6329268A · kind A · utility
5Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1998 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Nov 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
Abstract
In a method of manufacturing a semiconductor device that has an amorphous-silicon film onto which hemispherical grains are grown, a silicon wafer is cleaned at an elevated temperature using amnmonia hydrogen peroxide water solution, cleaned at an elevated temperature using chlorine hydrogen peroxide water solution, and then immersed in dilute hydrofluoric acid solution, after which it is rinsed with pure water, after which the amorphous-silicon film surface of the wafer is dried using isopropyl alcohol.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.