Quantum dots for optoelecronic devices
US6329668A · kind A · utility
59Cited by
4References
24Claims
0Family size
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Key dates
| Filing date | Jul 27, 2000 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Jul 27, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/932
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Aluminum Free InGaAs/InGaP quantum dot photoconductive detectors are grown on GaAs substrates by LP-MOCVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.