Composite structure with a growth substrate having a diamond layer and a plurality of microelectronic components, and process for producing such a composite structure

US6329674A · kind A · utility

Assignee

• Daimlerchrysler AG · US

Inventors

• Brigitte Konrad · Blaustein, DE
• Herbert Guettler · Langenau, DE

Key dates

• Filing date: Jun 9, 2000
• Grant date: Dec 11, 2001
• Expiry date: Jun 9, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a composite structure for microelectronic devices includes producing several microelectronic devices by means of a deposition method, preseeding a surface with growth seeds for a diamond and depositing the diamond layer from a gas phase. The diamond layer is provided with thin spots between the devices. According to the invention, the devices are laid down initially on a growth substrate directly and/or with the use of the material of the growth substrate. Following the deposition of the devices, the latter are seeded on their free surfaces for the diamond layer. The diamond layer is located on the seeded free surfaces of the devices.