High frequency carrier
US6329702A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2000 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Jul 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high frequency carrier is provided which comprises: (a) a planar ceramic substrate having first and second faces and (b) at least one feed-through extending from the first face to the second face. The at least one feed-through comprises a pedestal of doped semiconductor that is at least partially surrounded by a conductive metal layer. Also described is an electrical assembly, which comprises the above high frequency carrier and a metallized substrate. The first face of the carrier is attached to the metallized substrate such that the at least one feed-through is electrically connected to the metallized substrate. The electrical assembly can also comprise at least one electronic element (such as an electronic component or an electronic circuit) that is attached to the second face of the carrier such that the at least one electronic element is electrically connected to at least one feed-through.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.