Patent · US Expired

Magnetic field sensor having giant magnetoresistive effect elements, manufacturing method and apparatus therefor

US6329818A · kind A · utility

34Cited by
7References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 14, 1999
Grant dateDec 11, 2001
Priority date
Expiry dateJul 14, 2019

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S428/90
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The present invention is characterized in that a first giant magnetoresistive effect element and a second giant magnetoresistive effect element are provided along a first straight line with the magnetization of the pinned magnetic layer c oriented in a fixed direction, and that a third giant magnetoresistive effect element and a fourth giant magnetoresistive effect element are provided along a second straight line, which is parallel to the first straight line, with the magnetization of the pinned magnetic layer oriented 180.degree. opposite to the directions of magnetization of the pinned magnetic layers in the first and second giant magnetoresistive effect elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.