Magneto-resistance effect element based on a ferromagnetic oxide thin film on a stepped layer oxide
US6330135A · kind A · utility
2Cited by
2References
10Claims
0Family size
Inventors
Key dates
| Filing date | Sep 29, 1999 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Sep 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/1933
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magneto-resistance effect element includes an oxide substrate having on its surface steps of atomic layer level and on the substrate an epitaxially grown ferromagnetic oxide thin film, the thin film formed on the atomic layer level steps having an antiphased domain boundary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.