Semiconductor structure for flash memory enabling low operating potentials
US6330190A · kind A · utility
19Cited by
21References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 1997 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | May 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A semiconductor structure for a flash memory has memory cells which are formed in a first conductivity type well, which in turn is formed within an opposite conductivity type well. The opposite conductivity type well is formed in the substrate. Additional regions within each of the first and opposite conductivity type wells are used to provide electrical connections to the corresponding well. This structure is particularly advantageous because it provides the ability to operate the flash memory with considerably lower operating potentials than prior art flash memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.