Process for manufacturing hollow fused-silica insulator cylinder
US6331194A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1997 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Jul 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H9/00
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method for building hollow insulator cylinders that can have each end closed off with a high voltage electrode to contain a vacuum. A series of fused-silica round flat plates are fabricated with a large central hole and equal inside and outside diameters. The thickness of each is related to the electron orbit diameter of electrons that escape the material surface, loop, and return back. Electrons in such electron orbits can support avalanche mechanisms that result in surface flashover. For example, the thickness of each of the fused-silica round flat plates is about 0.5 millimeter. In general, the thinner the better. Metal, such as gold, is deposited onto each top and bottom surface of the fused-silica round flat plates using chemical vapor deposition (CVD). Eutectic metals can also be used with one alloy constituent on the top and the other on the bottom. The CVD, or a separate diffusion step, can be used to defuse the deposited metal deep into each fused-silica round flat plate. The conductive layer may also be applied by ion implantation or gas diffusion into the surface. The resulting structure may then be fused together into an insulator stack. The coated plates are aligned …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.