Method of forming carbon nanotubes
US6331209A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Apr 21, 2000 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Apr 21, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/888
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An easy method of forming purified carbon nanotubes from which graphitic phase or carbon particles are removed, using a high-density plasma. Carbon nanotubes are grown on a substrate using a plasma chemical vapor deposition method at a high plasma density of 10.sup.11 cm.sup.-3 or more. The carbon nanotube formation includes: growing a carbon nanotube layer on a substrate to have a predetermined thickness by plasma deposition; purifying the carbon nanotube layer by plasma etching; and repeating the growth and the purification of the carbon nanotube layer. For the plasma etching, a halogen-containing gas, for example, a carbon tetrafluoride gas, is used as a source gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.