Fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications
US6331257A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1999 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Nov 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H1/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods for the design and fabrication of micro-electro-mechanical switches are disclosed. Two different switch designs with three different switch fabrication techniques are presented for a total of six switch structures. Each switch has a multiple-layer armature with a suspended biasing electrode and a conducting transmission line affixed to the structural layer of the armature. A conducting dimple is connected to the conducting line to provide a reliable region of contact for the switch. The switch is fabricated using silicon nitride as the armature structural layer and silicon dioxide as the sacrificial layer supporting the armature during fabrication. Hydrofluoric acid is used to remove the silicon dioxide layer with post-processing in a critical point dryer to increase yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.