Phototonic device with strain-induced three dimensional growth morphology
US6331445A · kind A · utility
55Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | May 7, 1999 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | May 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to fabricate a photonic device with an enhanced photoresponse at 155 nm, a plurality of undulating quantum well layers are grown on said substrate in a three dimensional growth mode to defeat the limitations imposed by strain on the maximum layer thickness. The quantum wells typically are formed by epitaxially growing alternating layers of Si.sub.1-x,Ge.sub.x, and Si on a silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.