Power rectifier device and method of fabricating power rectifier devices
US6331455A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1999 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Apr 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power rectifier having low on resistance, mass recovery times and low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between the major surfaces of the discrete device. The device employs a large number of parallel connected cells, each comprising a MOSFET structure with a gate to drain short via a common metallization. This provides a low V.sub.f path through the channel regions of the MOSFET cells to the source region on the other side of the integrated circuit. A thin gate structure is formed annularly around the pedestal regions on the upper surface of the device and a precisely controlled body implant defines the channel region and allows controllable device characteristics, including gate threshold voltage and V.sub.f. A parallel Schottky diode is also provided which increases the switching speed of the MOSFET cells. The present invention further provides a method for manufacturing a rectifier device which provides highly repeatable device characteristics and which can provide such devices at reduced cost. The active channel regions of the device are defin…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.