Method of manufacturing a trench gate field effect semiconductor device
US6331467A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2000 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Mar 29, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/97
Abstract
A semiconductor body (1) is provided having a first semiconductor region (3) of one conductivity type separated from a first major surface (5a) by a second semiconductor region (5) of the opposite conductivity type. A trench (7) is etched through the second semiconductor region (5) to an etch stop layer (4) provided in the region of the pn junction between the first (3) and second (5) regions, by using an etching process which enables the etching process to be stopped at the etch stop layer. A gate (8, 9) is provided within the trench (7). A source (12) separated from the first region (3) by the second region (5) is formed adjacent the trench so that a conduction channel area (50) of the second region (5) adjacent the trench provides a conduction path between the source and first regions which is controllable by the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.