Doping of spherical semiconductors during non-contact processing in the liquid state
US6331477A · kind A · utility
3Cited by
11References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2000 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Jan 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and a dopant. The semiconductor spheres are heated to a molten state. The dopant is absorbed by the semiconductor spheres. The semiconductor spheres are cooled to produce doped semiconductor spheres. The method is performed in a non-contact environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.