Semiconductor device and method of fabricating the same
US6331727A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1999 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Aug 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
This invention includes a semiconductor substrate of one conductivity type having a semiconductor layer of an opposite conductivity type from an upper surface to a predetermined depth and first and second projections on the semiconductor layer of the opposite conductivity type, a first insulating film formed on an upper surface of the semiconductor substrate of one conductivity type from a portion except for the first and second projections to a predetermined level not reaching upper surfaces of the first and second projections, a semiconductor film of one conductivity type formed on at least the upper surface of the first projection, a first semiconductor film of the opposite conductivity type formed on at least the upper surface of the second projection, and a second semiconductor film of the opposite conductivity type formed in a predetermined position on an upper surface of the semiconductor film of one conductivity type. This structure allows an emitter to be formed without any alignment. In this invention, a p-type silicon layer corresponding to a base region and an n-type silicon layer corresponding to an emitter region are formed to be self-aligned with an element region (n…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.