Plasma processing apparatus and plasma processing method using the same
US6332947A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1999 |
| Grant date | Dec 25, 2001 |
| Priority date | — |
| Expiry date | Feb 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32688
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating space chamber coupled with the electron heating space chamber. A first static magnetic field generating device surrounds the electron heating space chamber using permanent magnets, producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength along a propagation direction of the microwave in the electron heating space chamber and in a microwave leading-out portion of the dielectric body, and forming a cusped magnetic field. This cusped magnetic field falls steeply from a position of electron cyclotron resonance magnetic field strength to a boundary portion between the electron heating space chamber and the plasma generating space chamber and its direction is reversed to that of the strong magnetic field with decreasing distance from the boundary portion between the electron heating space chamber and the plasma generating space chamber to the plasma generating space chamber. A second static magneti…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.