Method for fabricating nonvolatile ferroelectric memory
US6333201A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 1999 |
| Grant date | Dec 25, 2001 |
| Priority date | — |
| Expiry date | Jan 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
Abstract
Method for fabricating a nonvolatile ferroelectric memory, is disclosed, which can prolong a life time of the memory, including the steps of forming an insulating film on a semiconductor substrate, forming a bottom electrode on the insulating film, forming a ferroelectric film on the bottom electrode, wherein the ferroelectric film is formed of a material containing zirconium oxide as a base composition, the material having an antiferroelectric phase which can not be induced to a ferroelectric phase by an electric field, and the induced ferroelectric phase exhibiting a hysteresis in polarization-electric field characteristic and unable to be induced to an antiferroelectric phase by an electric field, and forming a top electrode on the ferroelectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.