Process for the production of semiconductor device
US6333206A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 1999 |
| Grant date | Dec 25, 2001 |
| Priority date | — |
| Expiry date | May 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01322
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a process for the production of a semiconductor device comprising a semiconductor element provided on a printed circuit board with a plurality of connecting electrode portions provided interposed therebetween, the gap between said printed circuit board and said semiconductor element being sealed with an underfill resin layer. In accordance with the present invention, (1) the underfill resin layer is formed by melting a lamellar solid resin provided interposed between said printed circuit board and said semiconductor element, and (2) the lamellar solid resin provided interposed between said printed circuit board and said semiconductor element is heated for a predetermined period of time until the temperature of the solid resin layer reaches a predetermined range where the two components are connected to each other under pressure under the following conditions (X) and (Y): (X) Supposing that the initial residual heat of reaction of the solid resin before heating is 100% as determined by a differential scanning calorimeter (DSC), the residual heat of reaction thereof is not more than 70% of the initial residual heat of reaction; and (Y) The temperature o…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.