Method of manufacturing active matrix type liquid crystal display
US6333267A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1995 |
| Grant date | Dec 25, 2001 |
| Priority date | — |
| Expiry date | Mar 8, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136295
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An active matrix type liquid crystal display, in which the reliability is enhanced by preventing the short-circuit and insulation breakdown of a gate insulating portion and the delay time of a gate bus line is shortened by reducing the resistivity of an interconnect film. The liquid crystal display of this type is manufactured by the steps of forming an interconnect/electrode film on a substrate by physical deposition; patterning the interconnect/electrode film; and anodic-oxidizing part or all of the interconnect/electrode film. In this method, the interconnect/electrode film is formed of an Al alloy containing at least one kind selected from a group consisting Fe, Co and rare earth elements in an amount of 0.1 to 10 at %; and the thickness of the anodic oxidation film is specified to be in the range of 200 .ANG. or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.