Edge passivated silicon solar/photo cell and method of manufacture
US6333457A · kind A · utility
116Cited by
4References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 29, 2000 |
| Grant date | Dec 25, 2001 |
| Priority date | — |
| Expiry date | Aug 29, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Edge passivation for a small area silicon cell is provided in a batch process by providing streets between individual cells formed in a silicon substrate and diffusing dopant through the substrate along the streets. Following completion of fabrication of the plurality of cells in the substrate, the substrate is sawed along the streets with the diffused region providing passivation along the edges of the individual die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.