Capacitor with noble metal electrode containing oxygen
US6333529A · kind A · utility
3Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1999 |
| Grant date | Dec 25, 2001 |
| Priority date | — |
| Expiry date | Feb 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
The present invention relates to a method of manufacturing a semiconductor device including steps of fabricating a capacitor. In a semiconductor device having a capacitor, the capacitor includes a lower electrode, a dielectric oxide film formed on the lower electrode, and an upper electrode formed the dielectric oxide film and formed of at least platinum in which oxygen is contained at a concentration of more than 1.times.10.sup.20 atoms/cm.sup.3. Accordingly, peeling of the upper electrode can be prevented and electric characteristics of the capacitor can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.