Apparatus for forming semiconductor crystal
US6334901B1 · kind B1 · utility
2Cited by
15References
5Claims
0Family size
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Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/105
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a semiconductor crystal growth apparatus, a substrate is heated in a growth vessel evacuated to a ultrahigh vacuum, and gas containing component elements of a semiconductor which should grow on the substrate are introduced into the growth vessel from external gas sources. Radiation having a specific wavelength is directed from an external irradiation source toward and onto the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.