Tunnel magnetoresistance effect element
US6335081B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2000 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Jul 21, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a tunnel magnetoresistance effect element comprising a tunnel multilayered film on an under layer, the tunnel multilayered film has a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, wherein three indexes representing a surface roughness state of a surface, which faces the tunnel multilayered film, of the under layer are set such that Ra ≦0.5 nm, Rmax ≦5 nm and Rrms ≦0.55 nm, wherein Ra is one of the three indexes and represents the center line average roughness, Rmax is one of the three indexes and represents the maximum height, and Rrms is one of the three indexes and represents the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.