Implant-patterned superconductive device and a method for indirect ion implantation of superconductive films
US6335108B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2000 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Sep 7, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/73
Abstract
An implant patterned superconductive device and a method for indirect implant-patterning of oxide superconducting materials is provided. The method forms a device having an oxide superconducting layer on a substrate, deposits a passivation layer atop the oxide superconducting layer, and implants chemical impurities in a selected portion of the superconducting layer through the passivation layer. This modifies the conductivity of the selected portion of the oxide superconducting layer and electrically isolates the selected portion from the non-selected portion of the oxide superconducting layer. The passivation layer is made of a material less susceptible to implant damage than the oxide superconducting layer to allow inhibition of the oxide superconducting layer while protecting the crystalline structure of the top surface of the oxide superconducting layer and keeping it planarized. The passivation layer is preferably a dielectric material having a crystal lattice structure which is compatible to that of the oxide superconducting layer. The method is especially efficient for the fabrication of devices with multiple layers of oxide superconductive materials because it does not degr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.