Method for fabricating ferroelectric thin film
US6335207B1 · kind B1 · utility
23Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2000 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Dec 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a ferroelectric thin film, capable of preventing degradation due to fatigue and aging of a ferroelectric thin film of PZT and enabling crystallization at a low temperature. The ferroelectric thin film fabrication method includes the steps of forming an insulation layer on one side of a semiconductor substrate, forming an electrode layer on the insulation layer, forming a ferroelectric layer on the electrode layer, and performing an ion damage processing on the ferroelectric layer using an ionized gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.