Method for fabricating a group III nitride semiconductor device
US6335218B1 · kind B1 · utility
12Cited by
1References
8Claims
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Key dates
| Filing date | May 5, 2000 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | May 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A group III nitride semiconductor device producing method is constructed by: a step of forming a first crystal layer made of a group III nitride semiconductor (AlxGa1−x)1−y.InyN (0≦×≦1, 0≦y≦1) doped with a group II impurity element; a step of a second crystal layer made of a group III nitride semiconductor AlzGa1−zN (0.7≦z≦1) onto the first crystal layer; and a step of removing at least a part of the second crystal layer by etching after the formation of the first and second crystal layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.