Plasma immersion ion processor for fabricating semiconductor integrated circuits
US6335268B1 · kind B1 · utility
2Cited by
13References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 1999 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Sep 23, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for fabricating a spherical shaped semiconductor integrated circuit according to which a chamber is provided into which spheres of a semiconductor material are introduced therein. Process gases are also selectively introduced into the chamber. The chamber includes a metallic portion that is selectively provided a voltage. Upon receiving the voltage, the chamber attracts ions from the process gases, at least some of the attracted ions treating the spheres according to a particular aspect of the fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.