Semiconductor device and method for fabricating the same
US6335552B1 · kind B1 · utility
5Cited by
9References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 12, 1997 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Sep 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
Abstract
The semiconductor device comprises a MOSFET including a pair of impurity diffused regions formed on both sides of a gate formed on a semiconductor substrate; an insulation film covering a top of the MOSFET and having a through-hole opened on one of the impurity diffused regions formed in; and a capacitor formed at least a part of an inside of the through-hole, the through-hole having a larger diameter inside than at a surface thereof or having a larger diameter at an intermediate part between the surface thereof and a bottom thereof than the surface and the bottom thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.