Semiconductor magnetoresistance device, making method and magnetic sensor

US6335675B1 · kind B1 · utility

Assignee

• TDK CORPORATION · JP

Inventors

• Sei Kakinuma · Akita, JP
• Masaichi Miyano · Tokyo, JP
• Katsuya Iwai · Tokyo, JP

Key dates

• Filing date: Mar 17, 2000
• Grant date: Jan 1, 2002
• Expiry date: Mar 17, 2020

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49082

Abstract

A semiconductor magnetoresistance device having plural pairs of opposed short-circuiting electrodes (13) on the opposed surfaces of a semiconductor magneto-sensitive layer (12) shows a great resistance change relative to a magnetic flux density.