Surface preparation method and semiconductor device
US6336970B1 · kind B1 · utility
1Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1999 |
| Grant date | Jan 8, 2002 |
| Priority date | — |
| Expiry date | Oct 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A surface preparation method and semiconductor device constituted so as to enable the prevention of carrier accumulation resulting from Si acting as a donor, without making the constitution of a semiconductor manufacturing apparatus complex. When forming an epitaxial layer either on the surface of a substrate, or on the surface of a base layer, Si or an Si compound that exists on the surface of a substrate, or on the surface of a base layer, is removed in accordance with a thermal cleaning process that uses an As hydride gas as the cleaning gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.