Process for the deposition by electron cyclotron resonance plasma of electron-emitting carbon films under the effect of an electric field applied
US6337110B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1999 |
| Grant date | Jan 8, 2002 |
| Priority date | — |
| Expiry date | Jun 11, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/18
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a process for electron cyclotron resonance plasma deposition of electron-emitting carbon films, in which by injecting a microwave power into a plasma chamber incorporating an electron cyclotron resonance zone (9), ionization takes place of a gaseous mixture under a low pressure, the thus created ions and electrons diffusing along the magnetic field lines (6) to a substrate (3), the gaseous mixture comprising organic molecules and hydrogen molecules. Said process comprises the following stages:heating the substrate (3),creating a plasma from the ionized gaseous mixture,creating a potential difference between the plasma and the substrate,diffusion of the plasma up to the substrate (3) which, by heating, has reached a temperature such that said electron-emitting material is deposited on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.