Method for forming a dielectric layer
US6337282B2 · kind B2 · utility
13Cited by
22References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1999 |
| Grant date | Jan 8, 2002 |
| Priority date | — |
| Expiry date | Jul 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric layer is formed by depositing a first dielectric layer above a semiconductor substrate including recessed regions, etching the first dielectric layer to remove any voids and to lower the aspect ratio of the recessed regions, and depositing a second dielectric layer on the first dielectric layer in the recessed regions. The method is particularly useful when the aspect ratios are high for recessed regions formed between patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.